Transmission electron microscopy and Rutherford backscattering studies of different damage structures in P+implanted Si
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چکیده
منابع مشابه
A view of the implanted SiC damage by Rutherford backscattering spectroscopy, spectroscopic ellipsometry, and transmission electron microscopy
4H-SiC single crystalline substrates were implanted at room temperature with 150 keV Al+ ions using fluences of 4 1014, 1 1015, and 2 1015 cm−2 with current density of 2.5 A cm−2. The samples were subsequently annealed at 1100 °C in N2 for 1 h in order to analyze their structural recovery. The disorder induced in both sublattices by the Al+ ions was studied by backscattering spectrometry in cha...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1980
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.327579